Polysilicon  Reactive Ion Etching

                  

              update:2016/01/25                

Instrument name Polysilicon  Reactive Ion Etching (Poly-Si RIE)
Brand Model

SAMCO RIE-10N

Purchase Date

1995/9/13
Seat Solid-State Electronics Building 1F 116R (TEL:55666

Services

Si3N4, Poly-Si, Si Etching

Note : Impurity dopant and metal on samples are NOT allowed to load in the chamber.

Specifications

1. Etching materials: Poly-Si and Si.

2. system features: One etch chamber and  two vacuum pumps.

3. Maximum RF (13.56 MHz) output power: 300 W.

4. Operation modes: Automatic or manual.

Open Level

Open Level, Open people

Contact people

1.Professor:Chen, Kuan-Neng   (TEL:03-5712121-31588)

2.Maintenance Technician: Hu, Jack  (TEL03-5712121-5560755666)

3.Instrument Operator: Chen, Ming-Li   (TEL:03-5712121-55672, 55666)

Operation appointment

National Sceince Council

The Instruments Information System

Original Equipment Manufacturer

Training Manual &

Quality Examination

Charge Fee
 

School

Research Institute

Commercial Agency

Original Equipment Manufacturer(NT$/2hr) 900 - -

Primary charge (NT$)

1600 1600 2200

Operating charge

(NT$/min)

1600

1600 2200